Diodes Incorporated
DMT8012LFG-7
MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- DMT80
- Package
- PowerDI3333-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 80 V
- Id - Continuous Drain Current
- 9.5 A
- Rds On - Drain-Source Resistance
- 14 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 15 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2.2 W
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Fall Time
- 3.5 ns
- Rise Time
- 3.8 ns
- Typical Turn-Off Delay Time
- 16.5 ns
- Typical Turn-On Delay Time
- 4.9 ns
- Unit Weight
- 0.002540 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.