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STMicroelectronics

2STR2160

Bipolar Transistors - BJT LOW VOLTAGE FAST SWITCHING PNP POWER

Basic Information

View Datasheet ↗
Manufacturer
STMicroelectronics
Product Category
Bipolar Transistors - BJT
Series
2STR2160
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 60 V
Collector- Base Voltage VCBO
- 60 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 260 mV
Maximum DC Collector Current
- 2 A
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
560
Continuous Collector Current
- 1 A
DC Collector/Base Gain hfe Min
45
Show more parameters (2)
Pd - Power Dissipation
500 mW
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2STR2160 Specifications and Datasheet | ChipSourceHub