onsemi
BC556ABU
Bipolar Transistors - BJT PNP -65V -100mA HFE/220
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- BC556
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 100 mA
- Collector- Emitter Voltage VCEO Max
- 65 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 250 mV
- Pd - Power Dissipation
- 500 mW
- Gain Bandwidth Product fT
- 150 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- - 100 mA
Show more parameters (3)
- Country of Assembly
- CN
- Country of Origin
- CN
- Unit Weight
- 0.006349 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.