ROHM Semiconductor
EMX4T2R
Bipolar Transistors - BJT DUAL NPN 30V 50MA
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- EMX4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 3 V
- Maximum DC Collector Current
- 0.05 A
- Gain Bandwidth Product fT
- 1.5 GHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 27 at 10 mA, 10 V
- Height
- 0.5 mm
- Length
- 1.6 mm
Show more parameters (4)
- Width
- 1.2 mm
- DC Collector/Base Gain hfe Min
- 27
- Pd - Power Dissipation
- 150 mW
- Part # Aliases
- EMX4
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.