ON Semiconductor
NSV40302PDR2G
Bipolar Transistors - BJT COMP 40V NPN/PNP LO
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS40302P
- Package
- SOIC-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 6 V, - 7 V
- Collector-Emitter Saturation Voltage
- - 0.17 V
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 230
- Continuous Collector Current
- 3 A
- DC Collector/Base Gain hfe Min
- 150
Show more parameters (3)
- Pd - Power Dissipation
- 653 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.002540 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.