NXP Semiconductors
AFT05MS003NT1
RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 2.6 A
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 30 V
- Gain
- 20.8 dB
- Output Power
- 3.2 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 1.8 MHz to 941 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 1 Channel
- Pd - Power Dissipation
- 30.5 W
Show more parameters (4)
- Vgs - Gate-Source Voltage
- - 6 V, 12 V
- Vgs th - Gate-Source Threshold Voltage
- 2.2 V
- Part # Aliases
- 935312585147
- Unit Weight
- 0.001792 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.