Microchip Technology
2N5430
Bipolar Transistors - BJT Power BJT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tray
- RoHS
- Not compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 7 A
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 700 mV
- Pd - Power Dissipation
- 40 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- US
Show more parameters (1)
- Unit Weight
- 0.283074 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.