ON Semiconductor
NJVMJD42CT4G
Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MJD42C
- Package
- DPAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 6 A
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 30 at 300 mA, 4 V
- Height
- 2.38 mm
- Length
- 6.73 mm
Show more parameters (6)
- Width
- 6.22 mm
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 1750 mW
- Qualification
- AEC-Q101
- Part # Aliases
- NJVMJD42CT4G-VF01
- Unit Weight
- 0.012346 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.