Microchip / Microsemi
JAN2N5339U3
Bipolar Transistors - BJT 100V 5A 1W NPN Low Profile CER Power BJT SMT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-276AA
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Not compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 5 A
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Pd - Power Dissipation
- 75 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 5 A
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 3
- DC Current Gain hFE Max
- 15
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.