Diodes Incorporated
BC847BFAQ-7B
Bipolar Transistors - BJT General Purpose Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- X2-DFN0806-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 122 mV
- Maximum DC Collector Current
- 100 mA
- Gain Bandwidth Product fT
- 170 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 470
- Continuous Collector Current
- 100 mA
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 435 mW
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.