Nexperia
PBSS5350X,115
Bipolar Transistors - BJT PNP 50V 3A LO VCESAT
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- UPAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 200 at 100 mA, 2 V
- Height
- 1.6 mm
- Length
- 4.6 mm
Show more parameters (6)
- Width
- 2.6 mm
- DC Collector/Base Gain hfe Min
- 200 at 100 mA, 2 V, 200 at 500 mA, 2 V, 200 at 1 A, 2 V, 130 at 2 A, 2 V, 80 at 3 A, 2 V
- Pd - Power Dissipation
- 1600 mW
- Qualification
- AEC-Q101
- Part # Aliases
- PBSS5350X T/R
- Unit Weight
- 0.035274 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.