ON Semiconductor / Fairchild
KSD363YTU
Bipolar Transistors - BJT NPN Epitaxial Sil
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- KSD363
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 120 V
- Collector- Base Voltage VCBO
- 300 V
- Emitter- Base Voltage VEBO
- 8 V
- Maximum DC Collector Current
- 6 A
- Gain Bandwidth Product fT
- 10 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 9.4 mm
- Length
- 10.1 mm
- Width
- 4.7 mm
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 40000 mW
- Part # Aliases
- KSD363YTU_NL
- Unit Weight
- 0.063493 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.