NXP Semiconductors
MRFE8VP8600HSR5
RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MRFE8VP8600H
- Package
- NI-1230S-4S
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- Dual N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 2.8 A
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 115 V
- Gain
- 21 dB
- Output Power
- 140 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 470 MHz to 860 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 2 Channel
- Pd - Power Dissipation
- 1.25 kW
Show more parameters (4)
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
- Vgs th - Gate-Source Threshold Voltage
- 1.3 V
- Part # Aliases
- 935345546178
- Unit Weight
- 0.467870 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.