Diodes Incorporated
MMST3904Q-7-F
Bipolar Transistors - BJT 60V NPN 40Vceo 200mA 200mW
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- MMST3904
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 0.3 V
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400
- Continuous Collector Current
- 200 mA
Show more parameters (3)
- Pd - Power Dissipation
- 200 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000176 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.