onsemi
SMMJT350T3G
Bipolar Transistors - BJT BIP S0T223 PNP 0.5A 300V
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- MMJT350T1
- Package
- SOT-223-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 500 mA
- Collector- Emitter Voltage VCEO Max
- 300 V
- Collector- Base Voltage VCBO
- 300 V
- Emitter- Base Voltage VEBO
- 5 V
- Pd - Power Dissipation
- 2.75 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
- Continuous Collector Current
- 500 mA
Show more parameters (3)
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 30
- DC Current Gain hFE Max
- 240
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.