NXP / Freescale
MRF8VP13350GNR3
RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP / Freescale
- Product Category
- RF MOSFET Transistors
- Series
- MRF8VP13350
- Package
- OM-780G-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- Dual N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 1.3 A
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 100 V
- Gain
- 19.2 dB
- Output Power
- 350 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 700 MHz to 1300 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 2 Channel
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
Show more parameters (3)
- Vgs th - Gate-Source Threshold Voltage
- 1.3 V
- Part # Aliases
- 935320727528
- Unit Weight
- 0.108111 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.