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Mini-Circuits

TAV1-331NM+

RF MOSFET Transistors SMT Low Noise Amplifier, 10 MHz - 4 GHz

Basic Information

View Datasheet ↗
Manufacturer
Mini-Circuits
Product Category
RF MOSFET Transistors
Series
TAV1
Package
1.42 mm x 1.2 mm x 0.85 mm
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

14 parameters
Transistor Polarity
N-Channel
Technology
GaAs
Id - Continuous Drain Current
60 mA
Vds - Drain-Source Breakdown Voltage
4 V
Operating Frequency
10 MHz to 4 GHz
Gain
12.3 dB
Output Power
21.5 dBm
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 85 C
Country of Origin
MY
Forward Transconductance - Min
282 mS
Number of Channels
1 Channel
Show more parameters (2)
Pd - Power Dissipation
400 mW
Vgs - Gate-Source Voltage
- 690 mV

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TAV1-331NM+ Specifications and Datasheet | ChipSourceHub