Central Semiconductor
2N5322
Bipolar Transistors - BJT 100Vcbo 100Vcev 2A 75Vceo 6.0Vebo 10W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5322
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Polarity
- PNP
- Collector- Emitter Voltage VCEO Max
- 75 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 700 mV
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 50 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Pd - Power Dissipation
- 10000 mW
- Part # Aliases
- 2N5322 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.