STMicroelectronics
MJE350
Bipolar Transistors - BJT PNP Medium Power
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- MJE350
- Package
- SOT-32-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 300 V
- Collector- Base Voltage VCBO
- 3 V
- Emitter- Base Voltage VEBO
- 3 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 0.5 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 240
- Height
- 10.8 mm
- Length
- 7.8 mm
Show more parameters (5)
- Width
- 2.7 mm
- Continuous Collector Current
- 0.5 A
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 20.8 W
- Unit Weight
- 0.002116 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.