ROHM Semiconductor
IMX4T108
Bipolar Transistors - BJT DUAL NPN 20V 50MA
Basic Information
- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- IMX4
- Package
- SMT-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 3 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 0.05 A
- Gain Bandwidth Product fT
- 1.5 GHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 180
- Height
- 1.1 mm
- Length
- 2.9 mm
Show more parameters (6)
- Width
- 1.6 mm
- Continuous Collector Current
- 50 mA
- DC Collector/Base Gain hfe Min
- 56
- Pd - Power Dissipation
- 300 mW
- Part # Aliases
- IMX4
- Unit Weight
- 0.001235 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.