Central Semiconductor
2N5087 TRA
Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 625mW 1.5W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5087A
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 3 V
- Collector-Emitter Saturation Voltage
- 0.3 V
- Gain Bandwidth Product fT
- 40 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 800 at 100 uA, 5 V
- Continuous Collector Current
- 50 mA
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 250 at 10 mA, 5 V
- Pd - Power Dissipation
- 1.5 W
- Part # Aliases
- 2N5087 PBFREE TRA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.