ROHM Semiconductor
2SAR587D3TL1
Bipolar Transistors - BJT PNP -3.0A -120V Power Transistor. 2SAR587D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 120 V
- Collector- Base Voltage VCBO
- - 120 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 100 mV
- Maximum DC Collector Current
- - 6 A
- Pd - Power Dissipation
- 10 W
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 390
Show more parameters (3)
- Technology
- Si
- Continuous Collector Current
- - 3 A
- DC Collector/Base Gain hfe Min
- 120
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.