Texas Instruments
TPS1120DR
MOSFET Dual P-Ch Enh-Mode MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Texas Instruments
- Product Category
- MOSFET
- Series
- TPS1120
- Package
- SOIC-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 15 V
- Id - Continuous Drain Current
- 1.17 A
- Rds On - Drain-Source Resistance
- 180 mOhms
- Vgs - Gate-Source Voltage
- 2 V, - 15 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Pd - Power Dissipation
- 840 mW
- Configuration
- Dual
- Channel Mode
- Enhancement
Show more parameters (11)
- Height
- 1.75 mm
- Length
- 4.9 mm
- Product
- MOSFET Small Signal
- Transistor Type
- 2 P-Channel
- Type
- PMOS Switches
- Width
- 3.9 mm
- Fall Time
- 10 ns
- Rise Time
- 10 ns
- Typical Turn-Off Delay Time
- 13 ns
- Typical Turn-On Delay Time
- 4.5 ns
- Unit Weight
- 0.002677 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.