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ON Semiconductor

MUN5213DW1T1G

Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Series
MUN5213DW1
Package
SOT-363(PB-Free)-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

16 parameters
Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
47 kOhms
Typical Resistor Ratio
1
DC Collector/Base Gain hfe Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
256 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
80
Show more parameters (4)
Height
0.9 mm
Length
2 mm
Width
1.25 mm
Unit Weight
0.000212 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MUN5213DW1T1G Specifications and Datasheet | ChipSourceHub