Central Semiconductor
MPSA18
Bipolar Transistors - BJT NPN Gen Pur SS
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MPSA
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 45 V
- Emitter- Base Voltage VEBO
- 6.5 V
- Gain Bandwidth Product fT
- 100 MHz
- DC Current Gain hFE Max
- 1500
- Continuous Collector Current
- 10 mA
- DC Collector/Base Gain hfe Min
- 500
- Pd - Power Dissipation
- 625 mW
- Part # Aliases
- MPSA18 PBFREE
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.