Central Semiconductor
PN5135 TIN/LEAD
Bipolar Transistors - BJT NPN 30Vcbo 25Vceo 4.0Vebo 100mA 25pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN5135
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 25 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 1 W
- Gain Bandwidth Product fT
- 40 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 200 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 15 at 1 V, 2 mA
- DC Current Gain hFE Max
- 600 at 10 V, 10 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.