ROHM Semiconductor
UMB3NFHATN
Bipolar Transistors - BJT PNP+PNP SOT-363 4.7kO Input Resist
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 300 mV
- Gain Bandwidth Product fT
- 250 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 600
- Continuous Collector Current
- - 100 mA
- DC Collector/Base Gain hfe Min
- 100
- Pd - Power Dissipation
- 150 mW
Show more parameters (2)
- Qualification
- AEC-Q101
- Part # Aliases
- UMB3NFHA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.