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onsemi

SMMBT3906LT1G

Bipolar Transistors - BJT SS GP XSTR SPCL TR

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
MMBT3906L
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

18 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Maximum DC Collector Current
200 mA
Collector- Emitter Voltage VCEO Max
40 V
Collector- Base Voltage VCBO
40 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
400 mV
Pd - Power Dissipation
300 mW
Gain Bandwidth Product fT
250 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (6)
Qualification
AEC-Q100
Continuous Collector Current
- 200 mA
Country of Origin
CN
DC Collector/Base Gain hfe Min
30
DC Current Gain hFE Max
300
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SMMBT3906LT1G Specifications and Datasheet | ChipSourceHub