Toshiba
2SC5712(TE12L,F)
Bipolar Transistors - BJT NPN 100V VCBO 50V VCEO 3A IC
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC5712
- Mounting Style
- Through Hole
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
9 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 0.14 V
- Maximum DC Collector Current
- 3 A
- Continuous Collector Current
- 0.3 A
- DC Collector/Base Gain hfe Min
- 400
- Pd - Power Dissipation
- 1 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.