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ON Semiconductor

NTMJS1D0N04CTWG

MOSFET TRENCH 6 40V SL NFET

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
MOSFET
Package
LFPAK-8
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
300 A
Rds On - Drain-Source Resistance
920 uOhms
Vgs th - Gate-Source Threshold Voltage
2.5 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
86 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
166 W
Show more parameters (8)
Configuration
Single
Channel Mode
Enhancement
Transistor Type
1 N-Channel
Forward Transconductance - Min
190 S
Fall Time
173 ns
Rise Time
162 ns
Typical Turn-Off Delay Time
227 ns
Typical Turn-On Delay Time
54 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NTMJS1D0N04CTWG Specifications and Datasheet | ChipSourceHub