Central Semiconductor
2N3860
Bipolar Transistors - BJT NPN Gen Pur SS
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3860
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 0.125 V
- Gain Bandwidth Product fT
- 90 MHz
- DC Current Gain hFE Max
- 300
- Height
- 5.33 mm
- Length
- 5.21 mm
- Technology
- Si
- Width
- 4.19 mm
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 150
- Part # Aliases
- 2N3860 PBFREE
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.