NXP Semiconductors
BFG35,115
RF Bipolar Transistors NPN 10V 150mA 4GHZ
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF Bipolar Transistors
- Package
- SOT-223
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 18 V
- Emitter- Base Voltage VEBO
- 2 V
- Continuous Collector Current
- 0.15 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Collector- Base Voltage VCBO
- 25 V
- DC Current Gain hFE Max
- 25
- Height
- 1.7 mm
Show more parameters (9)
- Length
- 6.7 mm
- Operating Frequency
- 4000 MHz
- Type
- RF Bipolar Small Signal
- Width
- 3.7 mm
- Gain Bandwidth Product fT
- 4000 MHz
- Maximum DC Collector Current
- 0.15 A
- Pd - Power Dissipation
- 1000 mW
- Part # Aliases
- 933919910115
- Unit Weight
- 0.003527 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.