Qorvo
TGF3015-SM
RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Package
- QFN-EP-16
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 17.1 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 32 V
- Vgs - Gate-Source Breakdown Voltage
- - 2.7 V
- Id - Continuous Drain Current
- 557 mA
- Output Power
- 11 W
- Pd - Power Dissipation
- 15.3 W
- Configuration
- Single
- Operating Frequency
- 0.03 GHz to 3 GHz
- Development Kit
- TGF3015-SM-EVB1
Show more parameters (2)
- Moisture Sensitive
- Yes
- Part # Aliases
- 1120419
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.