onsemi
NSV40302PDR2G
Bipolar Transistors - BJT COMP 40V NPN/PNP LO
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS40302P
- Package
- SOIC-8
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Maximum DC Collector Current
- 3 A
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 6 V, 7 V
- Collector-Emitter Saturation Voltage
- 82 mV, 135 mV
- Pd - Power Dissipation
- 653 mW
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (8)
- Qualification
- AEC-Q101
- Continuous Collector Current
- 3 A
- Country of Assembly
- PH
- Country of Diffusion
- MY
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 150
- DC Current Gain hFE Max
- 230
- Unit Weight
- 0.002540 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.