Central Semiconductor
2N4240 TIN/LEAD
Bipolar Transistors - BJT 500Vcbo 300Vceo 1.0Vce 2.0A 15Mhz
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N4240
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
10 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 300 V
- Collector- Base Voltage VCBO
- 500 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 35 W
- Gain Bandwidth Product fT
- 15 MHz
- Continuous Collector Current
- 2 A
- DC Collector/Base Gain hfe Min
- 40
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.