Central Semiconductor
2N3117
Bipolar Transistors - BJT NPN Low Lvl SS
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3117
- Package
- TO-18
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 350 mV
- Maximum DC Collector Current
- 50 mA
- Gain Bandwidth Product fT
- 60 MHz
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 500
- Height
- 5.33 mm
- Length
- 5.84 mm
Show more parameters (4)
- Width
- 5.84 mm
- DC Collector/Base Gain hfe Min
- 50 at 10 uA, 5 V
- Part # Aliases
- 2N3117 PBFREE
- Unit Weight
- 0.011020 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.