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Wolfspeed / Cree

CGHV14250F

RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt

Basic Information

View Datasheet ↗
Manufacturer
Cree, Inc.
Brand
Wolfspeed / Cree
Product Category
RF JFET Transistors
Package
440162
Mounting Style
Screw Mount
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

18 parameters
Transistor Type
HEMT
Technology
GaN
Gain
18.6 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
150 V
Vgs - Gate-Source Breakdown Voltage
- 10 V to 2 V
Id - Continuous Drain Current
18 A
Output Power
330 W
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 130 C
Configuration
Single
Height
3.78 mm
Show more parameters (6)
Length
20.45 mm
Operating Frequency
1.2 GHz to 1.4 GHz
Product
GaN HEMT
Width
10.29 mm
Development Kit
CGHV14250F-TB
Vgs th - Gate-Source Threshold Voltage
- 3 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CGHV14250F Specifications and Datasheet | ChipSourceHub