Toshiba
RN2306,LF
Bipolar Transistors - Pre-Biased USM TRANSISTOR Pd 100mW F 200Mhz
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN2306
- Package
- SC-70
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Configuration
- Single
- Transistor Polarity
- PNP
- Typical Input Resistor
- 4.7 kOhms
- Typical Resistor Ratio
- 0.1
- DC Collector/Base Gain hfe Min
- 80
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Continuous Collector Current
- - 100 mA
- Pd - Power Dissipation
- 100 mW
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
- Height
- 0.9 mm
- Length
- 2 mm
Show more parameters (4)
- Type
- PNP Epitaxial Silicon Transistor
- Width
- 1.25 mm
- Maximum DC Collector Current
- - 100 mA
- Unit Weight
- 0.000988 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.