Nexperia
PBSS305NZ,135
Bipolar Transistors - BJT NPN 80V 5.1A
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-223-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 190 mV
- Maximum DC Collector Current
- 5.1 A
- Gain Bandwidth Product fT
- 110 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300 at 500 mA, 2 V
- Height
- 1.7 mm
Show more parameters (7)
- Length
- 6.7 mm
- Width
- 3.7 mm
- DC Collector/Base Gain hfe Min
- 300 at 500 mA, 2 V, 250 at 1 A, 2 V, 180 at 2 A, 2 V, 90 at 4 A, 2 V, 50 at 6 A, 2 V
- Pd - Power Dissipation
- 2 W
- Qualification
- AEC-Q101
- Part # Aliases
- /T3 PBSS305NZ
- Unit Weight
- 0.003951 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.