ON Semiconductor / Fairchild
MMBTH10RG
RF Bipolar Transistors NPN RF Transistor
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- RF Bipolar Transistors
- Series
- MMBTH10RG
- Package
- SOT-23
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 50
- Collector- Emitter Voltage VCEO Max
- 40 V
- Emitter- Base Voltage VEBO
- 4 V
- Continuous Collector Current
- 0.045 A
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Collector- Base Voltage VCBO
- 40 V
- DC Current Gain hFE Max
- 120
Show more parameters (9)
- Height
- 0.93 mm
- Length
- 2.92 mm
- Operating Frequency
- 450 MHz
- Type
- RF Bipolar Small Signal
- Width
- 1.3 mm
- Gain Bandwidth Product fT
- 450 MHz (Min)
- Maximum DC Collector Current
- 0.05 A
- Pd - Power Dissipation
- 225 mW
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.