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ROHM Semiconductor

QS5Y2FSTR

Bipolar Transistors - BJT PNP+NPN Driver Tran TSMT5

Basic Information

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Manufacturer
ROHM Semiconductor
Product Category
Bipolar Transistors - BJT
Package
SOT-25T-5
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

15 parameters
Technology
Si
Transistor Polarity
NPN, PNP
Configuration
Dual
Collector- Emitter Voltage VCEO Max
50 V
Collector- Base Voltage VCBO
50 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
350 mV, 400 mV
Pd - Power Dissipation
1.25 W
Gain Bandwidth Product fT
320 MHz, 300 MHz
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
3 A
Country of Origin
KR
Show more parameters (3)
DC Collector/Base Gain hfe Min
180 at 50 mA, 3 V
DC Current Gain hFE Max
450 at 50 mA, 3 V
Part # Aliases
QS5Y2

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

QS5Y2FSTR Specifications and Datasheet | ChipSourceHub