Central Semiconductor
2N5769 PBFREE
Bipolar Transistors - BJT NPN 40Vcbo 40Vces 15Vceo 4.5Vebo 350mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5769
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 500 mA
- Collector- Emitter Voltage VCEO Max
- 15 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 4.5 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Pd - Power Dissipation
- 350 mW
- Gain Bandwidth Product fT
- 500 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (3)
- Continuous Collector Current
- 200 mA
- DC Collector/Base Gain hfe Min
- 20 at 1 V, 100 mA
- DC Current Gain hFE Max
- 120 at 0.35 V, 10 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.