Qorvo
TGF2120
RF JFET Transistors DC-20GHz Gain 11dB 57% PAE@12GHz
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Package
- Die
- Packaging
- Gel Pack
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Type
- pHEMT
- Technology
- GaAs
- Gain
- 11 dB
- Vds - Drain-Source Breakdown Voltage
- 8 V
- Vgs - Gate-Source Breakdown Voltage
- - 12 V
- Id - Continuous Drain Current
- 194 mA
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 4.2 W
- Configuration
- Single
- Operating Frequency
- 20 GHz
- Product
- RF JFET
- Type
- GaAs pHEMT
Show more parameters (3)
- Forward Transconductance - Min
- 464 mS
- P1dB - Compression Point
- 31 dBm
- Part # Aliases
- 1098613
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.