STMicroelectronics
ST13007D
Bipolar Transistors - BJT PTD HIGH VOLTAGE
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- ST13007D
- Package
- TO-220-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 400 V
- Collector- Base Voltage VCBO
- 700 V
- Emitter- Base Voltage VEBO
- 9 V
- Maximum DC Collector Current
- 8 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 15.75 mm
- Length
- 10.4 mm
- Width
- 4.6 mm
- Continuous Collector Current
- 8 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 18 at 2 A, 5 V, 8 at 5 A, 5 V
- Pd - Power Dissipation
- 80 W
- Unit Weight
- 0.070548 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.