Vishay / Siliconix
SIHH14N60E-T1-GE3
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- E
- Package
- PowerPAK-8x8-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 16 A
- Rds On - Drain-Source Resistance
- 220 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 41 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 147 W
Show more parameters (9)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 1 mm
- Length
- 8 mm
- Width
- 8 mm
- Fall Time
- 31 ns
- Rise Time
- 21 ns
- Typical Turn-Off Delay Time
- 56 ns
- Typical Turn-On Delay Time
- 16 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.