ChipSourceHub

Qorvo

TGF2929-FL

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN

Basic Information

View Datasheet ↗
Manufacturer
Qorvo
Product Category
RF MOSFET Transistors
Packaging
Tray
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Transistor Polarity
N-Channel
Technology
GaN SiC
Id - Continuous Drain Current
12 A
Vds - Drain-Source Breakdown Voltage
28 V
Gain
14 dB
Output Power
107 W
Operating Frequency
3.5 GHz
Type
RF Power MOSFET
Moisture Sensitive
Yes
Pd - Power Dissipation
144 W
Vgs - Gate-Source Voltage
145 V
Vgs th - Gate-Source Threshold Voltage
- 2.9 V
Show more parameters (1)
Part # Aliases
1123811

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TGF2929-FL Specifications and Datasheet | ChipSourceHub