Diodes Incorporated
FMMT591TC
Bipolar Transistors - BJT PNP Medium Power
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- FMMT591
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 295 mV
- Pd - Power Dissipation
- 500 mW
- Gain Bandwidth Product fT
- 150 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (5)
- Continuous Collector Current
- - 1 A
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 300 at 1 mA, 5 V, 300 at 100 mA, 5 V, 250 at 500 mA, 5 V, 160 at 1 A, 5 V, 30 at 2 A, 5 V
- DC Current Gain hFE Max
- 300 at 1 mA, 5 V
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.