Qorvo
QPD1022SR
RF JFET Transistors DC-12GHz 10W 32V GaN
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- QPD1022
- Package
- QFN-16
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 24 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 32 V
- Vgs - Gate-Source Breakdown Voltage
- - 2.8 V
- Id - Continuous Drain Current
- 610 mA
- Output Power
- 10 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 13.8 W
- Operating Frequency
- DC to 12 GHz
Show more parameters (2)
- Development Kit
- QPD1022EVB01
- Moisture Sensitive
- Yes
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.