Diodes Incorporated
ZXTN08400BNS-7
Bipolar Transistors - BJT Pwr Mid Perf Transistor PowerDI3333-8 T&R 2K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- PowerDI3333-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 400 V
- Collector- Base Voltage VCBO
- 450 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 125 mV
- Pd - Power Dissipation
- 830 mW
- Gain Bandwidth Product fT
- 40 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (5)
- Continuous Collector Current
- 500 mA
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 100 at 50 mA, 5 V
- DC Current Gain hFE Max
- 300 at 50 mA, 5 V
- Unit Weight
- 0.001058 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.