NXP Semiconductors
A3G18H500-04SR3
RF MOSFET Transistors Airfast RF Power GaN Transistor, 1805-1880 MHz, 107 W Avg., 48 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- NI-780S-4L
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- Dual N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 200 mA
- Vds - Drain-Source Breakdown Voltage
- 125 V
- Gain
- 15.4 dB
- Output Power
- 107 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 1805 MHz to 1880 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 2 Channel
- Vgs - Gate-Source Voltage
- - 8 V
Show more parameters (3)
- Vgs th - Gate-Source Threshold Voltage
- - 2.3 V
- Part # Aliases
- 935351522128
- Unit Weight
- 0.116623 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.